| PART |
Description |
Maker |
| NGB8245N |
Gate?Emitter ESD Protection
|
Littelfuse
|
| BUK854-800A |
Insulated Gate Bipolar Transistor IGBT 12 A, 800 V, N-CHANNEL IGBT, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IRG4PC50UPBF |
55 A, 600 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
|
International Rectifier
|
| HCPL-J314 HCPL-J314-300 HCPL-J314-500 HCPL-J314-XX |
0.4 Amp Output Current IGBT Gate Drive Optocoupler 0.4安培输出电流IGBT栅极驱动光电耦合
DB25 F/F NULL MODEM ADAPT SCA-
HCPL-J314 · 0.4 Amp Output Current IGBT Gate Drive Optocoupler
|
Ecliptek, Corp.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| IHW40T60 IHW40T60-13 |
IGBT in TRENCHSTOP technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
|
Infineon Technologies A...
|
| IKW50N60T IKW50N60T-13 |
IGBT in TRENCHSTOP?and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
|
Infineon Technologies A...
|
| OM6517SA OM6517SW |
1200V DISCRETE Hi-Rel IGBT in a D3 package
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
|
International Rectifier
List of Unclassifed Manufacturers
|
| IRG4PSH71UD |
99 A, 1200 V, N-CHANNEL IGBT, TO-274AA
INSULATED GATE BIPOLAR TRANSISTOR WITH
1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package
|
IRF[International Rectifier]
|
| IKW15N120T2 |
IGBT in 2nd generation TrenchStop? technology with soft, fast recovery anti-parallel Emitter Controlled Diode
|
Infineon Technologies A...
|
| TLP250 |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TLP250F |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
Toshiba Semiconductor
|
| AIKW75N60CT |
Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode
|
Infineon Technologies A...
|
